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Transistor
2SC2188
Silicon NPN epitaxial planer type
For intermediate frequency amplification of TV image
Unit: mm
6.90.1 1.5 2.50.1 1.0
1.0 2.40.2 2.00.2 3.50.1
s Features
q q q
1.5 R0.9 R0.9
0.85
0.550.1
0.450.05
1.250.05
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg
(Ta=25C)
Ratings 45 35 4 50 600 150 -55 ~ +150 Unit V V V mA mW C C
1:Base 2:Collector 3:Emitter
2.5 2.5 3 2 1
EIAJ:SC-71 M Type Mold Package
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Common emitter reverse transfer capacitance Power gain
(Ta=25C)
Symbol ICEO VCBO VCEO VEBO hFE VCE(sat) fT Cre PG Conditions VCE = 20V, IB = 0 IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCB = 10V, IE = -10mA IC = 20mA, IB = 2mA VCB = 10V, IE = -10mA, f = 100MHz VCE = 10V, IC = 1mA VCB = 10V, IE = -10mA, f = 58MHz 18 300 500 1.5 45 35 4 20 50 100 0.5 V MHz pF dB min typ max 10 Unit A V V V
4.10.2
High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
0.4
1.00.1
R
0.
4.50.1
7
1
Transistor
PC -- Ta
800 80 70
2SC2188
IC -- VCE
60 25C VCE=10V
IC -- VBE
Collector power dissipation PC (mW)
700
Collector current IC (mA)
600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160
60 1.6mA 50 40 30 20 10 0 0 2 4 6 8 10 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA
Collector current IC (mA)
IB=2.0mA 1.8mA
50 Ta=75C 40 -25C
30
20
10
0 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 -25C Ta=75C IC/IB=10 120
hFE -- IC
600 VCE=10V VCB=10V Ta=25C
fT -- I E
Forward current transfer ratio hFE
100
Transition frequency fT (MHz)
10 30 100
500
80 Ta=75C 60 25C 40 -25C
400
300
200
20
100
0.3
1
3
10
30
100
0 0.1
0.3
1
3
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob -- VCB
Collector output capacitance Cob (pF)
IE=0 f=1MHz Ta=25C
Cre -- VCE
Common emitter reverse transfer capacitance Cre (pF)
2.4 IC=1mA f=10.7MHz Ta=25C 30
PG -- IE
VCB=10V f=58MHz Ta=25C
3.0
2.5
2.0
25
2.0
1.6
Power gain PG (dB)
1 3 10 30 100
20
1.5
1.2
15
1.0
0.8
10
0.5
0.4
5
0 1 3 10 30 100
0
0 - 0.1 - 0.3
-1
-3
-10
-30
-100
Collector to base voltage VCB (V)
Collector to emitter voltage VCE (V)
Emitter current IE (mA)
2
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2001 MAR

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